Invention Grant
US09177873B2 Systems and methods for fabricating semiconductor device structures
有权
用于制造半导体器件结构的系统和方法
- Patent Title: Systems and methods for fabricating semiconductor device structures
- Patent Title (中): 用于制造半导体器件结构的系统和方法
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Application No.: US13953532Application Date: 2013-07-29
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Publication No.: US09177873B2Publication Date: 2015-11-03
- Inventor: Alok Vaid , Carsten Hartig , Lokesh Subramany
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: G06F17/00
- IPC: G06F17/00 ; H01L21/66 ; G03F7/20

Abstract:
Methods and systems are provided for fabricating and measuring physical features of a semiconductor device structure. An exemplary method of fabricating a semiconductor device structure involves obtaining raw measurement data for a wafer of semiconductor material from a metrology tool and adjusting a measurement model utilized by a metrology tool based at least in part on the raw measurement data and a value for a design parameter. The wafer has that value for the design parameter and an attribute of the semiconductor device structure fabricated thereon, wherein the measurement model is utilized by the metrology tool to convert the raw measurement data to a measurement value for the attribute.
Public/Granted literature
- US20150033201A1 SYSTEMS AND METHODS FOR FABRICATING SEMICONDUCTOR DEVICE STRUCTURES Public/Granted day:2015-01-29
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