发明授权
- 专利标题： ESD protection with asymmetrical bipolar-based device
- 专利标题（中）： 使用非对称双极型器件的ESD保护
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申请号： US14053716申请日： 2013-10-15
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公开(公告)号： US09177952B2公开(公告)日： 2015-11-03
- 发明人: Rouying Zhan , Chai Ean Gill , Changsoo Hong , Michael H. Kaneshiro
- 申请人： Rouying Zhan , Chai Ean Gill , Changsoo Hong , Michael H. Kaneshiro
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Lempia Summerfield Katz LLC
- 主分类号： H01L29/74
- IPC分类号： H01L29/74 ; H01L29/747 ; H01L29/00 ; H01L21/331 ; H01L27/082 ; H01L29/73 ; H01L27/02 ; H01L29/66 ; H01L23/60
摘要：
An electrostatic discharge (ESD) protection device includes a semiconductor substrate comprising a buried insulator layer and a semiconductor layer over the buried insulator layer having a first conductivity type, and first and second bipolar transistor devices disposed in the semiconductor layer, laterally spaced from one another, and sharing a common collector region having a second conductivity type. The first and second bipolar transistor devices are configured in an asymmetrical arrangement in which the second bipolar transistor device includes a buried doped layer having the second conductivity type and extending along the buried insulator layer from the common collector region across a device area of the second bipolar transistor device.
公开/授权文献
- US20150102384A1 ESD Protection with Asymmetrical Bipolar-Based Device 公开/授权日：2015-04-16
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