发明授权
US09177956B2 Field effect transistor (FET) with self-aligned contacts, integrated circuit (IC) chip and method of manufacture
有权
具有自对准触点的场效应晶体管（FET），集成电路（IC）芯片和制造方法
- 专利标题： Field effect transistor (FET) with self-aligned contacts, integrated circuit (IC) chip and method of manufacture
- 专利标题（中）： 具有自对准触点的场效应晶体管（FET），集成电路（IC）芯片和制造方法
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申请号： US13956339申请日： 2013-07-31
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公开(公告)号： US09177956B2公开(公告)日： 2015-11-03
- 发明人: Szu-Lin Cheng , Jack O. Chu , Isaac Lauer , Jeng-Bang Yau
- 申请人： International Business Machines Corporation
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Law Office of Charles W. Peterson, Jr.
- 代理商 Louis J. Percello, Esq.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L27/092 ; H01L21/8238 ; H01L27/12 ; H01L21/84
摘要：
Field Effect Transistors (FETs), Integrated Circuit (IC) chips including the FETs, and a method of forming the FETs and IC. FET locations and adjacent source/drain regions are defined on a semiconductor wafer, e.g., a silicon on insulator (SOI) wafer. Source/drains are formed in source/drains regions. A stopping layer is formed on source/drains. Contact spacers are formed above gates. Source/drain contacts are formed to the stopping layer, e.g., after converting the stopping layer to silicide. The contact spacers separate source/drain contacts from each other.
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