发明授权
US09178043B2 Non-planar transistors with replacement fins and methods of forming the same
有权
具有替代翅片的非平面晶体管及其形成方法
- 专利标题： Non-planar transistors with replacement fins and methods of forming the same
- 专利标题（中）： 具有替代翅片的非平面晶体管及其形成方法
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申请号： US13924364申请日： 2013-06-21
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公开(公告)号： US09178043B2公开(公告)日： 2015-11-03
- 发明人: Ka-Hing Fung
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/8234
摘要：
A method includes forming a first semiconductor fin, and oxidizing surface portions of the first semiconductor fin to form a first oxide layer. The first oxide layer includes a top portion overlapping the first semiconductor fin and sidewall portions on sidewalls of the first semiconductor fin. The top portion of the first oxide layer is then removed, wherein the sidewall portions of the first oxide layer remains after the removing. The top portion of the first semiconductor fin is removed to form a recess between the sidewall portions of the first oxide layer. An epitaxy is performed to grow a semiconductor region in the recess.
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