发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US13451777申请日: 2012-04-20
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公开(公告)号: US09178051B2公开(公告)日: 2015-11-03
- 发明人: Man-jong Yu
- 申请人: Man-jong Yu
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Lee & Morse, P.C.
- 优先权: KR10-2011-0036850 20110420
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L27/105 ; H01L27/108
摘要:
A semiconductor device includes an active region on a semiconductor substrate. The active region is defined by a device isolation layer and includes gate-recesses. The semiconductor device further includes gate electrodes in the gate-recesses, a contact recess in the active region between the gate-recesses, a cell pad that covers at least a portion of the active region between the gate-recesses and that fills at least a portion of the contact recess, and a bit line electrically connected to the cell pad.
公开/授权文献
- US20120267712A1 SEMICONDUCTOR DEVICE 公开/授权日:2012-10-25
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