发明授权
- 专利标题： Magnetoresistive element and method of manufacturing the same
- 专利标题（中）： 磁阻元件及其制造方法
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申请号： US14203198申请日： 2014-03-10
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公开(公告)号： US09178134B2公开(公告)日： 2015-11-03
- 发明人: Masahiko Nakayama , Tadashi Kai , Masaru Toko , Toshihiko Nagase , Hiroaki Yoda
- 申请人： Masahiko Nakayama , Tadashi Kai , Masaru Toko , Toshihiko Nagase , Hiroaki Yoda
- 代理机构： Holtz, Holtz, Goodman & Chick PC
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L43/10 ; H01L43/12 ; H01L45/00 ; H01L29/82 ; H01L27/24 ; H01L27/22
摘要：
According to one embodiment, a magnetoresistive element is disclosed. The element includes a first magnetic film, a second magnetic film, and a first nonmagnetic layer formed between the first magnetic film and the second magnetic film. The second magnetic film includes a first magnetic layer formed on a side of the first nonmagnetic layer, a second magnetic layer formed on a side opposite to the first nonmagnetic layer, and a second nonmagnetic layer formed between the first magnetic layer and the second magnetic layer and containing TiN.
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