Invention Grant
- Patent Title: Sputtering target of ferromagnetic material with low generation of particles
- Patent Title (中): 铁磁材料的溅射靶与低代粒子
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Application No.: US13808938Application Date: 2011-01-28
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Publication No.: US09181617B2Publication Date: 2015-11-10
- Inventor: Shin-ichi Ogino , Atsushi Sato , Yuichiro Nakamura , Atsutoshi Arakawa
- Applicant: Shin-ichi Ogino , Atsushi Sato , Yuichiro Nakamura , Atsutoshi Arakawa
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2010-163328 20100720; JP2010-283152 20101220
- International Application: PCT/JP2011/051766 WO 20110128
- International Announcement: WO2012/011294 WO 20120126
- Main IPC: H01F41/18
- IPC: H01F41/18 ; C23C14/34 ; C22C1/04 ; C22C19/07 ; C22C32/00 ; C22F1/10 ; G11B5/851 ; H01F10/16

Abstract:
Provided is a sputtering target of ferromagnetic material comprising a metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a phase (A) which is a basis metal, and metal phases (B) having a component composition different from the peripheral texture within the phase (A), the area ratio occupied by oxides within 1 μm from the most outer periphery of metal phases (B) is 80% or less, and the average grain size of the metal phases (B) is 10 μm or more and 150 μm or less. Provided is a sputtering target of ferromagnetic material capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.
Public/Granted literature
- US20130112555A1 Sputtering Target of Ferromagnetic Material with Low Generation of Particles Public/Granted day:2013-05-09
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