Invention Grant
- Patent Title: Apparatus and method for inspecting pattern defect
- Patent Title (中): 检测图案缺陷的装置和方法
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Application No.: US13386243Application Date: 2010-06-21
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Publication No.: US09182359B2Publication Date: 2015-11-10
- Inventor: Hisashi Hatano , Hiroyuki Yamashita , Hidetoshi Nishiyama
- Applicant: Hisashi Hatano , Hiroyuki Yamashita , Hidetoshi Nishiyama
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2009-171719 20090723
- International Application: PCT/JP2010/004106 WO 20100621
- International Announcement: WO2011/010425 WO 20110127
- Main IPC: G01N21/95
- IPC: G01N21/95 ; G01N21/956 ; G01R31/265 ; H01L21/68

Abstract:
Provided is a pattern defect inspecting apparatus wherein inspection performance is stabilized. The defect inspecting apparatus, which has a plurality of configuration units and inspects defects on the surface of a sample, is provided with a means for monitoring time-dependent changes and failures of some of or all of the configuration units, and a means for notifying the user of the results of the monitoring. Furthermore, a unit which can perform correction is provided with a correcting means, and also a means for replacing a failure component with a spare component which has been prepared in the device.
Public/Granted literature
- US20120268742A1 APPARATUS AND METHOD FOR INSPECTING PATTERN DEFECT Public/Granted day:2012-10-25
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