Invention Grant
- Patent Title: Monolithic optoelectronic TWE-component structure for high frequencies and low optical insertion loss
- Patent Title (中): 单片光电TWE组件结构，用于高频和低光插入损耗
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Application No.: US12638372Application Date: 2009-12-15
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Publication No.: US09182546B2Publication Date: 2015-11-10
- Inventor: Kelvin Prosyk , Ronald Kaiser , Karl-Otto Velthaus
- Applicant: Kelvin Prosyk , Ronald Kaiser , Karl-Otto Velthaus
- Applicant Address: DE Munich CA Quebec
- Assignee: Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V.,Teraxion Inc.
- Current Assignee: Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V.,Teraxion Inc.
- Current Assignee Address: DE Munich CA Quebec
- Agency: Hovey Williams LLP
- Main IPC: G02B6/26
- IPC: G02B6/26 ; G02B6/42 ; G02B6/122 ; G02B6/30
Abstract:
A monolithic optoelectronic device has a spot-size converter optically connected to a waveguide. The overclad extending over the core of the waveguide is thinner and more highly doped that the overclad of the spot-size converter. This structure can be made by applying a process of selective etching and enhanced regrowth to create selective regions of the overclad of different thickness or doping.
Public/Granted literature
- US20100150494A1 MONOLITHIC OPTOELECTRONIC TWE-COMPONENT STRUCTURE FOR HIGH FREQUENCIES AND LOW OPTICAL INSERTION LOSS Public/Granted day:2010-06-17
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