Invention Grant
US09184090B2 Thin film transistor display panel and manufacturing method of the same
有权
薄膜晶体管显示面板及其制造方法相同
- Patent Title: Thin film transistor display panel and manufacturing method of the same
- Patent Title (中): 薄膜晶体管显示面板及其制造方法相同
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Application No.: US13151102Application Date: 2011-06-01
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Publication No.: US09184090B2Publication Date: 2015-11-10
- Inventor: Seung-Ha Choi , Kyoung-Jae Chung , Woo-Geun Lee
- Applicant: Seung-Ha Choi , Kyoung-Jae Chung , Woo-Geun Lee
- Applicant Address: KR
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2010-0052879 20100604
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/768 ; G02F1/1333 ; G02F1/1362 ; H01L27/12 ; H01L29/49 ; H01L29/786 ; H01L29/66

Abstract:
A TFT display panel having a high charge mobility and making it possible to obtain uniform electric characteristics with respect to a large-area display is provided as well as a manufacturing method thereof. A TFT display panel includes a gate electrode formed on an insulation substrate, a first gate insulting layer formed of SiNx on the gate electrode, a second gate insulting layer formed of SiOx on the first gate insulting layer, an oxide semiconductor layer formed to overlap the gate electrode and having a channel part, and a passivation layer formed of SiOx on the oxide semiconductor layer and the gate electrode, and the passivation layer includes a contact hole exposing the drain electrode. The contact hole has a shape in which the passivation layer of a portion directly exposed together with a metal occupies an area smaller than the upper passivation layer.
Public/Granted literature
- US20110297930A1 THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2011-12-08
Information query
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