Invention Grant
- Patent Title: Semiconductor structure and manufacturing method for the same
- Patent Title (中): 半导体结构及制造方法相同
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Application No.: US13798275Application Date: 2013-03-13
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Publication No.: US09184096B2Publication Date: 2015-11-10
- Inventor: Guan-Ru Lee , Erh-Kun Lai
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/4763 ; H01L21/8238 ; H01L27/115
Abstract:
A semiconductor structure and a manufacturing method for the same are provided. The method includes following steps. A first gate structure is formed on a substrate in a first region. A protecting layer is formed covering the first gate structure. A second gate structure is formed on the substrate in second region exposed by the protecting layer and adjacent to the first region.
Public/Granted literature
- US20140264621A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME Public/Granted day:2014-09-18
Information query
IPC分类:
