Invention Grant
- Patent Title: Semiconductor devices and methods for fabricating the same
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US14141947Application Date: 2013-12-27
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Publication No.: US09184136B2Publication Date: 2015-11-10
- Inventor: Jiyoung Kim , Daeik Kim , Kang-Uk Kim , Nara Kim , Jemin Park , Kyuhyun Lee , Hyun-Woo Chung , Gyoyoung Jin , HyeongSun Hong , Yoosang Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2013-0022848 20130304
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L23/48 ; H01L21/683 ; H01L27/06 ; H01L27/146 ; H01L21/768 ; H01L27/108

Abstract:
A method of fabricating a semiconductor device includes providing a semiconductor substrate having a first surface and a second surface opposite the first surface, forming an alignment key and a connection contact that penetrate a portion of the semiconductor substrate and extend from the first surface toward the second surface, forming a first circuit on the first surface of the semiconductor substrate such that the first circuit is electrically connected to the connection contact, recessing the second surface of the semiconductor substrate to form a third surface exposing the alignment key and the connection contact, and forming a second circuit on the third surface of the semiconductor substrate such that the second circuit is electrically connected to the connection contact.
Public/Granted literature
- US20140246782A1 SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME Public/Granted day:2014-09-04
Information query
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