Invention Grant
- Patent Title: Method of manufacturing semiconductor device
-
Application No.: US14669722Application Date: 2015-03-26
-
Publication No.: US09184221B2Publication Date: 2015-11-10
- Inventor: Yasuhiro Jinbo , Toshiyuki Isa , Tatsuya Honda
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2007-023747 20070202
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/32 ; H01L29/66 ; H01L29/786 ; H01L29/24 ; H01L29/49 ; H01L29/45 ; H01L29/423 ; H01L51/56 ; H01L21/02
Abstract:
An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate.
Public/Granted literature
- US20150270321A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2015-09-24
Information query
IPC分类:
