Invention Grant
US09184263B2 Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
有权
使用替代栅极技术形成用于半导体器件的栅极结构的方法和所得到的器件
- Patent Title: Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
- Patent Title (中): 使用替代栅极技术形成用于半导体器件的栅极结构的方法和所得到的器件
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Application No.: US14143468Application Date: 2013-12-30
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Publication No.: US09184263B2Publication Date: 2015-11-10
- Inventor: Xiuyu Cai , Ajey Poovannummoottil Jacob , Daniel T. Pham , Mark V. Raymond , Christopher M. Prindle , Catherine B. Labelle , Linus Jang , Robert Teagle
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L29/66 ; H01L21/3105 ; H01L29/06 ; H01L29/417 ; H01L29/51 ; H01L29/423 ; H01L21/768 ; H01L29/78
Abstract:
One method disclosed herein includes, among other things, forming sidewall spacers adjacent opposite sides of a sacrificial gate electrode of a sacrificial gate structure, forming a tensile-stressed layer of insulating material adjacent the sidewall spacers, removing the sacrificial gate structure to define a replacement gate cavity positioned between the sidewall spacers, forming a replacement gate structure in the replacement gate cavity, forming a tensile-stressed gate cap layer above the replacement gate structure and within the replacement gate cavity and, after forming the tensile-stressed gate cap layer, removing the tensile-stressed layer of insulating material.
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