发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US14347443申请日： 2011-09-28
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公开(公告)号： US09184338B2公开(公告)日： 2015-11-10
- 发明人: Meoung Whan Cho , Seog Woo Lee , Ryuichi Toba , Yoshitaka Kadowaki
- 申请人： Meoung Whan Cho , Seog Woo Lee , Ryuichi Toba , Yoshitaka Kadowaki
- 申请人地址： CN Hong Kong JP Tokyo
- 专利权人： BBSA LIMITED,DOW ELECTRONICS MATERIALS CO., LTD.
- 当前专利权人： BBSA LIMITED,DOW ELECTRONICS MATERIALS CO., LTD.
- 当前专利权人地址： CN Hong Kong JP Tokyo
- 代理机构： Oliff PLC
- 国际申请： PCT/JP2011/005485 WO 20110928
- 国际公布： WO2013/046267 WO 20130404
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L33/00 ; H01L21/02 ; H01L21/78 ; H01L29/06 ; H01L33/20
摘要：
The method of manufacturing a semiconductor device according to the present invention includes: a step of forming a semiconductor laminate on a growth substrate with a lift-off layer therebetween; a step of providing grooves in a grid pattern in the semiconductor laminate, thereby forming a plurality of semiconductor structures each having a nearly quadrangular transverse cross-sectional shape; a step of forming a conductive support body; and a step of removing the lift-off layer using a chemical lift-off process, in which step, in supplying an etchant to the grooves via through-holes provided in a portion above the grooves, the lift-off layer is etched from only one side surface of each semiconductor structure.
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