Invention Grant
- Patent Title: Pattern inspection apparatus and method
- Patent Title (中): 图案检验装置及方法
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Application No.: US13604456Application Date: 2012-09-05
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Publication No.: US09189843B2Publication Date: 2015-11-17
- Inventor: Tadashi Kitamura , Toshiaki Hasebe , Masotoshi Tsuneoka
- Applicant: Tadashi Kitamura , Toshiaki Hasebe , Masotoshi Tsuneoka
- Applicant Address: JP Tokyo
- Assignee: NGR Inc.
- Current Assignee: NGR Inc.
- Current Assignee Address: JP Tokyo
- Agency: Lathrop & Gage LLP
- Priority: JP2006-328802 20061205
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G06T7/00

Abstract:
A pattern inspection apparatus is used for inspecting a fine pattern, such as a semiconductor integrated circuit (LSI), a liquid crystal panel, and a photomask (reticle) for the semiconductor or the liquid crystal panel, which are fabricated based on data for fabricating the fine pattern such as design data. The pattern inspection apparatus includes a reference pattern generation device configured to generate a reference pattern represented by one or more lines, comprising one of a line segment and a curve, from the data, an image generation device configured to generate the image of the pattern to-be-inspected, a detecting device configured to detect an edge of the image of the pattern to-be-inspected, and an inspection device configured to inspect the pattern to-be-inspected by comparing the edge of the image of the pattern to-be-inspected with the one or more lines of the reference pattern.
Public/Granted literature
- US20120328181A1 PATTERN INSPECTION APPARATUS AND METHOD Public/Granted day:2012-12-27
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