Invention Grant
US09190163B2 Operating method of nonvolatile memory device and operating method of memory controller controlling the nonvolatile memory device
有权
非易失性存储器件的操作方法和控制非易失性存储器件的存储器控制器的操作方法
- Patent Title: Operating method of nonvolatile memory device and operating method of memory controller controlling the nonvolatile memory device
- Patent Title (中): 非易失性存储器件的操作方法和控制非易失性存储器件的存储器控制器的操作方法
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Application No.: US14328913Application Date: 2014-07-11
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Publication No.: US09190163B2Publication Date: 2015-11-17
- Inventor: Hai-Seok Park , Boh-Chang Kim , Hyung Suk Kim , Kiwhan Song
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0090269 20130730
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/34

Abstract:
An operating method of a memory controller controlling a nonvolatile memory device including a plurality of pages includes receiving a read request and a logical address from an additional device; determining a program state of an upper unselected word line of a selected word line corresponding to the received logical address; and transmitting a physical address corresponding to the logical address, state information, and a read command to the nonvolatile memory device according to a result of the determination in response to the read request, wherein the state information indicates a level of a first unselect read voltage the nonvolatile memory device is to apply to the upper unselected word line.
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