Invention Grant
- Patent Title: Memory devices and formation methods
- Patent Title (中): 记忆装置和形成方法
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Application No.: US14247653Application Date: 2014-04-08
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Publication No.: US09190265B2Publication Date: 2015-11-17
- Inventor: Jun Liu , Gurtej S. Sandhu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L21/8239
- IPC: H01L21/8239 ; H01L21/02 ; H01L27/24 ; H01L45/00

Abstract:
A method includes forming an electrical insulator material over an integrated circuit having a metal-containing conductive interconnect and activating a dopant in a semiconductor material of a substrate to provide a doped region. The doped region provides a junction of opposite conductivity types. After activating the dopant, the substrate is bonded to the insulator material and at least some of the substrate is removed where bonded to the insulator material. After the removing, a memory cell is formed having a word line, an access diode, a state-changeable memory element containing chalcogenide phase change material, and a bit line all electrically connected in series, the access diode containing the junction as a p-n junction. A memory device includes an adhesion material over the insulator material and bonding the word line to the insulator material.
Public/Granted literature
- US20140220763A1 Memory Devices and Formation Methods Public/Granted day:2014-08-07
Information query
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