Invention Grant
- Patent Title: Method for producing a copper layer on a semiconductor body using a printing process
- Patent Title (中): 使用印刷方法在半导体主体上制造铜层的方法
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Application No.: US14163694Application Date: 2014-01-24
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Publication No.: US09190322B2Publication Date: 2015-11-17
- Inventor: Martin Mischitz , Manfred Schneegans , Markus Heinrici
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L23/00 ; H01L21/027 ; H01L23/532
Abstract:
A method for producing a metal layer on a wafer is described. In one embodiment the method comprises providing a semiconductor wafer including a coating, printing a metal particle paste on the semiconductor wafer thereby forming a metal layer and heating the metal layer in a reductive gas for sintering the metal particle paste or for annealing a sintered metal particle paste in an oven.
Public/Granted literature
- US20150214095A1 Method for Producing a Copper Layer on a Semiconductor Body Using a Printing Process Public/Granted day:2015-07-30
Information query
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