Invention Grant
US09190431B2 Thin-film transistor array substrate and method of fabricating the same 有权
薄膜晶体管阵列基板及其制造方法

  • Patent Title: Thin-film transistor array substrate and method of fabricating the same
  • Patent Title (中): 薄膜晶体管阵列基板及其制造方法
  • Application No.: US14216189
    Application Date: 2014-03-17
  • Publication No.: US09190431B2
    Publication Date: 2015-11-17
  • Inventor: Chun-Gi You
  • Applicant: Samsung Display Co., Ltd.
  • Applicant Address: KR Giheung-Gu, Yongin-si, Gyeonggi-Do
  • Assignee: Samsung Display Co., Ltd.
  • Current Assignee: Samsung Display Co., Ltd.
  • Current Assignee Address: KR Giheung-Gu, Yongin-si, Gyeonggi-Do
  • Agent Robert E. Bushnell, Esq.
  • Priority: KR10-2011-0010348 20110201
  • Main IPC: H01L27/12
  • IPC: H01L27/12
Thin-film transistor array substrate and method of fabricating the same
Abstract:
A thin-film transistor (TFT) array substrate comprises: a substrate; an active layer and a capacitor first electrode formed on the substrate; a gate insulating film formed on the substrate, the active layer and the capacitor first electrode; a gate electrode formed on the gate insulating film corresponding to the active layer and a capacitor second electrode formed on the gate insulating film corresponding to the capacitor first electrode; an interlayer insulating film formed on the gate insulating film, the gate electrode, and the capacitor second electrode; and a pixel electrode, a source electrode, and a drain electrode formed on the interlayer insulating film; wherein at least one of the source electrode and the drain electrode is formed on the pixel electrode. A method of fabricating the TFT array substrate is also disclosed.
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