Invention Grant
- Patent Title: Thin-film transistor array substrate and method of fabricating the same
- Patent Title (中): 薄膜晶体管阵列基板及其制造方法
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Application No.: US14216189Application Date: 2014-03-17
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Publication No.: US09190431B2Publication Date: 2015-11-17
- Inventor: Chun-Gi You
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Giheung-Gu, Yongin-si, Gyeonggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Giheung-Gu, Yongin-si, Gyeonggi-Do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2011-0010348 20110201
- Main IPC: H01L27/12
- IPC: H01L27/12

Abstract:
A thin-film transistor (TFT) array substrate comprises: a substrate; an active layer and a capacitor first electrode formed on the substrate; a gate insulating film formed on the substrate, the active layer and the capacitor first electrode; a gate electrode formed on the gate insulating film corresponding to the active layer and a capacitor second electrode formed on the gate insulating film corresponding to the capacitor first electrode; an interlayer insulating film formed on the gate insulating film, the gate electrode, and the capacitor second electrode; and a pixel electrode, a source electrode, and a drain electrode formed on the interlayer insulating film; wherein at least one of the source electrode and the drain electrode is formed on the pixel electrode. A method of fabricating the TFT array substrate is also disclosed.
Public/Granted literature
- US20140197415A1 THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-07-17
Information query
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