Invention Grant
- Patent Title: Light emitting diode array and method for manufacturing the same
- Patent Title (中): 发光二极管阵列及其制造方法
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Application No.: US13422142Application Date: 2012-03-16
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Publication No.: US09190451B2Publication Date: 2015-11-17
- Inventor: Tzu-Chien Hung , Chia-Hui Shen
- Applicant: Tzu-Chien Hung , Chia-Hui Shen
- Applicant Address: TW Hsinchu Hsien
- Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Current Assignee: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201110223564 20110805
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/08 ; H01L27/15 ; H01L33/10 ; H01L33/20 ; H01L33/22 ; H01L33/62

Abstract:
An LED array includes a substrate, protrusions formed on a top surface of the substrate, and LEDs formed on the top surface of the substrate and located at a top of the protrusions. The LEDs are electrically connected with each other. Each LED includes a connecting layer, an n-type GaN layer, an active layer, and a p-type GaN layer formed on a top of the protrusions in sequence. A bottom surface of the n-type GaN layer connecting the connecting layer has a roughened exposed portion. The bottom surface of the n-type GaN layer has an N-face polarity.
Public/Granted literature
- US20130032815A1 LIGHT EMITTING DIODE ARRAY AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-02-07
Information query
IPC分类: