发明授权
US09190483B2 AlN single crystal Schottky barrier diode and method of producing the same
有权
AlN单晶肖特基势垒二极管及其制造方法
- 专利标题： AlN single crystal Schottky barrier diode and method of producing the same
- 专利标题（中）： AlN单晶肖特基势垒二极管及其制造方法
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申请号： US14374331申请日： 2013-01-30
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公开(公告)号： US09190483B2公开(公告)日： 2015-11-17
- 发明人: Yoshihiro Irokawa , Kiyoshi Shimamura , Encarnacion Antonia Garcia Villora
- 申请人： National Institute for Materials Science
- 申请人地址： JP Tsukuba-shi, Ibaraki
- 专利权人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- 当前专利权人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- 当前专利权人地址： JP Tsukuba-shi, Ibaraki
- 代理机构： Drinker Biddle & Reath LLP
- 优先权： JP2012-016926 20120130
- 国际申请： PCT/JP2013/052086 WO 20130130
- 国际公布： WO2013/115269 WO 20130808
- 主分类号： H01L29/20
- IPC分类号： H01L29/20 ; H01L29/872 ; H01L29/66 ; H01L29/45 ; H01L29/47
摘要：
An AlN single crystal Schottky barrier diode including: an AlN single crystal substrate having a defect density of 106 cm−2 or less and a thickness of 300 μm or more; a first electrode formed on one surface of the AlN single crystal substrate; and a second electrode formed on one surface of the AlN single crystal substrate while being spaced apart from the first electrode, the AlN single crystal Schottky barrier diode being provided with: a rectifying property such that an on-off ratio at the time of applying 10 V and −40 V is at least 103 even at a high temperature of 573 K; a high voltage resistance such that a voltage can be applied at least within a range of −40 V to 10 V; and a low on-resistance characteristic such that a current begins to flow at no greater than 5 V.
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