发明授权
US09190523B2 Oxide semiconductor, thin film transistor including the same, and thin film transistor array panel including the same
有权
氧化物半导体,包括该氧化物半导体的薄膜晶体管和包括该氧化物半导体的薄膜晶体管阵列面板
- 专利标题: Oxide semiconductor, thin film transistor including the same, and thin film transistor array panel including the same
- 专利标题(中): 氧化物半导体,包括该氧化物半导体的薄膜晶体管和包括该氧化物半导体的薄膜晶体管阵列面板
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申请号: US13554393申请日: 2012-07-20
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公开(公告)号: US09190523B2公开(公告)日: 2015-11-17
- 发明人: Byung Du Ahn , Je Hun Lee , Sei-Yong Park , Jun Hyun Park , Gun Hee Kim , Ji Hun Lim , Jae Woo Park , Jin Seong Park , Toshihiro Kugimiya , Aya Miki , Shinya Morita , Tomoya Kishi , Hiroaki Tao
- 申请人: Byung Du Ahn , Je Hun Lee , Sei-Yong Park , Jun Hyun Park , Gun Hee Kim , Ji Hun Lim , Jae Woo Park , Jin Seong Park , Toshihiro Kugimiya , Aya Miki , Shinya Morita , Tomoya Kishi , Hiroaki Tao
- 申请人地址: KR KR JP
- 专利权人: SAMSUNG DISPLAY CO., LTD.,Jin Seong Park,KOBE STEEL, LTD.
- 当前专利权人: SAMSUNG DISPLAY CO., LTD.,Jin Seong Park,KOBE STEEL, LTD.
- 当前专利权人地址: KR KR JP
- 代理机构: Cantor Colburn LLP
- 优先权: KR10-2011-0095748 20110922
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L21/02 ; H01L29/66 ; H01L27/12
摘要:
An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3.