Invention Grant
US09193133B2 Graphene-layered structure, method of preparing the same, and transparent electrode and transistor including graphene-layered structure
有权
石墨烯层状结构体及其制备方法以及包含石墨烯层状结构的透明电极和晶体管
- Patent Title: Graphene-layered structure, method of preparing the same, and transparent electrode and transistor including graphene-layered structure
- Patent Title (中): 石墨烯层状结构体及其制备方法以及包含石墨烯层状结构的透明电极和晶体管
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Application No.: US14165819Application Date: 2014-01-28
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Publication No.: US09193133B2Publication Date: 2015-11-24
- Inventor: Hyeon-jin Shin , Jae-young Choi , Joung-real Ahn , Jung-tak Seo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2011-0061796 20110624
- Main IPC: H01L21/265
- IPC: H01L21/265 ; B32B9/04 ; H01L21/02 ; H01L31/0224 ; H01L31/18 ; H01L29/16 ; B82Y30/00 ; B82Y40/00 ; B82Y10/00 ; H01L29/778 ; H01M8/08 ; H01M8/10 ; H01M4/96 ; H01M8/02
Abstract:
A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.
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