Invention Grant
US09196340B2 Magnetic random access memory having increased on/off ratio and methods of manufacturing and operating the same
有权
具有增加的开/关比的磁随机存取存储器及其制造和操作方法
- Patent Title: Magnetic random access memory having increased on/off ratio and methods of manufacturing and operating the same
- Patent Title (中): 具有增加的开/关比的磁随机存取存储器及其制造和操作方法
-
Application No.: US14080108Application Date: 2013-11-14
-
Publication No.: US09196340B2Publication Date: 2015-11-24
- Inventor: Ho-jung Kim , Hyun-sik Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0016600 20130215
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; H01L43/08 ; H01L27/22 ; G11C11/15 ; H01L43/12
Abstract:
A magnetic random access memory (MRAM), and methods of manufacturing and operating the MRAM, include a switching element and a storage node connected to the switching element, and a magnetic node configured to simultaneously store two opposite bits.
Public/Granted literature
Information query
