Invention Grant
- Patent Title: High Q factor inductor structure
- Patent Title (中): 高Q因子电感结构
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Application No.: US14099007Application Date: 2013-12-06
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Publication No.: US09196406B2Publication Date: 2015-11-24
- Inventor: Dirk Robert Walter Leipold , Danny W. Chang , George Maxim , Ruediger Bauder
- Applicant: RF Micro Devices, Inc.
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01F5/00
- IPC: H01F5/00 ; H01F27/29 ; H01F27/28 ; H01F17/00

Abstract:
The present disclosure provides a vertical inductor structure in which the magnetic field is closed such that the magnetic field of the vertical inductor structure is cancelled in the design direction outside the vertical inductor structure, yielding a small, or substantially zero, coupling factor of the vertical inductor structure. In one embodiment, several vertical inductor structures of the present disclosure can be placed in close proximity to create small resonant circuits and filter chains.
Public/Granted literature
- US20140266544A1 HIGH Q FACTOR INDUCTOR STRUCTURE Public/Granted day:2014-09-18
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