发明授权
- 专利标题： Methods of using a trench salicide routing layer
- 专利标题（中）： 使用沟槽自对准路由层的方法
-
申请号： US13729843申请日： 2012-12-28
-
公开(公告)号： US09196548B2公开(公告)日： 2015-11-24
- 发明人: Mahbub Rashed , Srikanth Samavedam , David Doman , Navneet Jain , Subramani Kengeri , Suresh Venkatesan
- 申请人： Mahbub Rashed , Srikanth Samavedam , David Doman , Navneet Jain , Subramani Kengeri , Suresh Venkatesan
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Ditthavong & Steiner, P.C.
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L27/12 ; H01L21/8238 ; H01L27/092
摘要：
Methodology enabling selectively connecting fin structures using a segmented trench salicide layer, and the resulting device are disclosed. Embodiments include: providing on a substrate at least one gate structure; providing first and second fin structures in a vertical direction intersecting with the at least one gate structure; and providing a first segment of a salicide layer, the first segment being formed along a horizontal direction and being connected with the second fin structure and separated from the first fin structure.
公开/授权文献
- US20140183638A1 METHODS OF USING A TRENCH SALICIDE ROUTING LAYER 公开/授权日：2014-07-03
信息查询
IPC分类:
