Invention Grant
US09196574B2 Snubber circuit and method of using bipolar junction transistor in snubber circuit
有权
缓冲电路和在缓冲电路中使用双极结型晶体管的方法
- Patent Title: Snubber circuit and method of using bipolar junction transistor in snubber circuit
- Patent Title (中): 缓冲电路和在缓冲电路中使用双极结型晶体管的方法
-
Application No.: US13612846Application Date: 2012-09-13
-
Publication No.: US09196574B2Publication Date: 2015-11-24
- Inventor: Kuo-Fan Lin
- Applicant: Kuo-Fan Lin
- Applicant Address: TW Taoyuan Dist., Taoyuan
- Assignee: FSP TECHNOLOGY INC.
- Current Assignee: FSP TECHNOLOGY INC.
- Current Assignee Address: TW Taoyuan Dist., Taoyuan
- Agent Winston Hsu; Scott Margo
- Priority: TW101103040A 20120131
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H01L23/495 ; H01L21/56 ; H01L23/62 ; H01L25/16 ; H01L23/498 ; H01L23/00 ; H01L23/31

Abstract:
A snubber circuit includes: a capacitor including a first terminal and a second terminal, where the first terminal of the capacitor is electrically connected to a first terminal of the snubber circuit; and a Bipolar Junction Transistor (BJT), where one of the emitter and the collector of the BJT is electrically connected to the second terminal of the capacitor, and the other one of the emitter and the collector of the BJT is electrically connected to a second terminal of the snubber circuit. The snubber circuit can be electrically connected in parallel to an active component or a load to protect the circuitry connected to the load, and more particularly to absorb spike or noise generated during high-frequency switching of the active component to recycle energy, in order to achieve the goal of reducing spike voltages and enhancing efficiency.
Public/Granted literature
- US20130063853A1 SNUBBER CIRCUIT AND METHOD OF USING BIPOLAR JUNCTION TRANSISTOR IN SNUBBER CIRCUIT Public/Granted day:2013-03-14
Information query