发明授权
- 专利标题： Solid-state imaging device
- 专利标题（中）： 固态成像装置
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申请号： US14546803申请日： 2014-11-18
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公开(公告)号： US09196649B2公开(公告)日： 2015-11-24
- 发明人: Noriko Takagi , Hiroyuki Mori
- 申请人： Sony Corporation
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Sony Corporation
- 优先权： JP2005-065987 20050309
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L27/146 ; H01L31/02
摘要：
A MOS solid-state imaging device is provided in which withstand voltage and 1/f noise of a MOS transistor are improved.In the MOS solid-state imaging device whose unit pixel has at least a photoelectric converting portion and a plurality of field effect transistors, the thickness of gate insulating film in a part of the field effect transistors is different from the thickness of gate insulating film in the other field effect transistors among the plurality of the field effect transistors.
公开/授权文献
- US20150069478A1 SOLID-STATE IMAGING DEVICE 公开/授权日：2015-03-12
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