Tensile nitride profile shaper etch to provide void free gapfill

Invention Grant

US09196684B2 Tensile nitride profile shaper etch to provide void free gapfill 有权

Title translation: 拉伸氮化物型材整形器蚀刻以提供无空隙的填隙

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Patent Title: Tensile nitride profile shaper etch to provide void free gapfill
Patent Title (中): 拉伸氮化物型材整形器蚀刻以提供无空隙的填隙
Application No.: US14254710

Application Date: 2014-04-16
Publication No.: US09196684B2

Publication Date: 2015-11-24
Inventor: Kai Frohberg , Peter Moll , Dominik Olligs , Heike Scholz
Applicant: GLOBALFOUNDRIES INC.
Applicant Address: KY Grand Cayman
Assignee: GLOBALFOUNDRIES INC.
Current Assignee: GLOBALFOUNDRIES INC.
Current Assignee Address: KY Grand Cayman
Agency: Ditthavong & Steiner, P.C.
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L29/10

Abstract:

A method of reducing the impact of FEoL topography on dual stress liner depositions and the resulting device are disclosed. Embodiments include forming a first nitride layer between and over a pFET and an nFET; thinning the first nitride layer; forming a second nitride layer over the first nitride layer; and removing the first and the second nitride layers from over the pFET.

Abstract(Chinese):

公开了一种减少FEoL地形对双应力衬垫沉积物的影响的方法和所得到的装置。实施例包括在pFET和nFET之间和之上形成第一氮化物层; 使第一氮化物层变薄; 在所述第一氮化物层上形成第二氮化物层; 以及从pFET上方去除第一和第二氮化物层。

Public/Granted literature

US20150303261A1 TENSILE NITRIDE PROFILE SHAPER ETCH TO PROVIDE VOID FREE GAPFILL Public/Granted day:2015-10-22

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS