Invention Grant
- Patent Title: Integrated circuits with relaxed silicon / germanium fins
- Patent Title (中): 具有松散硅/锗鳍片的集成电路
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Application No.: US14177800Application Date: 2014-02-11
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Publication No.: US09196710B2Publication Date: 2015-11-24
- Inventor: Andy Wei , Jin Ping Liu , Shao Ming Koh , Amaury Gendron
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L21/8238 ; H01L29/78 ; H01L29/165

Abstract:
Integrated circuits with relaxed silicon and germanium fins and methods for fabricating such integrated circuits are provided. The method includes a forming a crystalline silicon and germanium composite layer overlying a crystalline silicon substrate, where a composite layer crystal lattice is relaxed. A fin is formed in the composite layer, and a gate is formed overlying the fin. A portion of the fin is removed on opposite sides of the gate to form a drain cavity and a source cavity, and a source and a drain are formed in the source cavity and drain cavity, respectively.
Public/Granted literature
- US20150228755A1 INTEGRATED CIRCUITS WITH RELAXED SILICON / GERMANIUM FINS Public/Granted day:2015-08-13
Information query
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