Invention Grant
- Patent Title: High voltage metal-oxide-semiconductor transistor device
- Patent Title (中): 高压金属氧化物半导体晶体管器件
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Application No.: US13629609Application Date: 2012-09-28
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Publication No.: US09196717B2Publication Date: 2015-11-24
- Inventor: Ming-Shun Hsu , Ke-Feng Lin , Chih-Chung Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/08
Abstract:
A HV MOS transistor device is provided. The HV MOS transistor device includes a substrate comprising at least an insulating region formed thereon, a gate positioned on the substrate and covering a portion of the insulating region, a drain region and a source region formed at respective sides of the gate in the substrate, and a first implant region formed under the insulating region. The substrate comprises a first conductivity type, the drain, the source, and the first implant region comprise a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other.
Public/Granted literature
- US20140091369A1 HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE Public/Granted day:2014-04-03
Information query
IPC分类:
