Invention Grant
- Patent Title: Thin-film transistor substrate and method for fabricating the same, display
- Patent Title (中): 薄膜晶体管基板及其制造方法，显示
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Application No.: US13714976Application Date: 2012-12-14
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Publication No.: US09196734B2Publication Date: 2015-11-24
- Inventor: Szu-Wei Lai
- Applicant: INNOCOM TECHNOLOGY (SHENZHEN) CO., LTD. , CHIMEI INNOLUX CORPORATION
- Applicant Address: CN TW
- Assignee: INNOCOM TECHNOLOGY (SHENZHEN) CO., LTD.,INNOLUX CORPORATION
- Current Assignee: INNOCOM TECHNOLOGY (SHENZHEN) CO., LTD.,INNOLUX CORPORATION
- Current Assignee Address: CN TW
- Agency: Hauptman Ham, LLP
- Priority: TW100146718A 20111216
- Main IPC: H01L29/41
- IPC: H01L29/41 ; H01L51/52 ; H01L29/786 ; H01L33/00 ; H01L21/02 ; H01L21/3213 ; H01L29/417 ; H01L29/423 ; H01L29/45 ; H01L29/49 ; H01L27/12
Abstract:
The invention provides a thin-film transistor substrate, including: a substrate; a metal lead structure formed on the substrate, wherein the metal lead structure includes: a main conductor layer formed on the substrate, wherein the main conductor has a sidewall; a top conductor layer having a first portion, second portion and third portion, wherein the first portion is formed on the main conductor layer, the second portion is formed on the sidewall of the main conductor layer, and the third portion is formed on the substrate, and a continuous structure is formed by the first portion, the second portion and the third portion.
Public/Granted literature
- US20130153872A1 THIN-FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME, DISPLAY Public/Granted day:2013-06-20
Information query
IPC分类:
