发明授权
- 专利标题： Field effect device with oxide semiconductor layer
- 专利标题（中）： 具有氧化物半导体层的场效应器件
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申请号： US13860855申请日： 2013-04-11
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公开(公告)号： US09196743B2公开(公告)日： 2015-11-24
- 发明人: Masatoshi Yokoyama , Tsutomu Murakawa , Kenichi Okazaki , Masayuki Sakakura , Takuya Matsuo , Akihiro Oda , Shigeyasu Mori , Yoshitaka Yamamoto
- 申请人： Masatoshi Yokoyama , Tsutomu Murakawa , Kenichi Okazaki , Masayuki Sakakura , Takuya Matsuo , Akihiro Oda , Shigeyasu Mori , Yoshitaka Yamamoto
- 申请人地址： JP Atsugi-shi, Kanagawa-ken JP Osaka-shi, Osaka
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken JP Osaka-shi, Osaka
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2012-093512 20120417
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/786
摘要：
Provided is a semiconductor device in which generation of a parasitic channel in an end region of an oxide semiconductor film is suppressed. The semiconductor device includes a gate electrode, an oxide semiconductor film, a source electrode and a drain electrode, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface of the source electrode and a second side surface of the drain electrode opposite to the first side surface. The oxide semiconductor film has an end region which does not overlap with the gate electrode. The end region which does not overlap with the gate electrode is positioned between a first region that is the nearest to one end of the first side surface and a second region that is the nearest to one end of the second side surface.
公开/授权文献
- US20130270553A1 SEMICONDUCTOR DEVICE 公开/授权日：2013-10-17
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