发明授权
- 专利标题： Method for manufacturing light emitting device
- 专利标题（中）： 发光装置的制造方法
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申请号： US13620903申请日： 2012-09-15
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公开(公告)号： US09196858B2公开(公告)日： 2015-11-24
- 发明人: Junichiro Sakata
- 申请人： Junichiro Sakata
- 申请人地址： JP
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Husch Blackwell LLP
- 优先权： JP2005-194559 20050704
- 主分类号： H01L21/443
- IPC分类号： H01L21/443 ; H01L51/50 ; H01L51/56
摘要：
An object of the present invention to improve reliability of a light emitting device having a mixed layer including an organic compound and metal oxide without reducing productivity. The above object is solved in such a way that after forming the mixed layer including the organic compound and metal oxide, the mixed layer is exposed to a nitrogen gas atmosphere without being exposed to a gas atmosphere including oxygen, and then a stacked film is formed over the mixed layer without exposing the mixed layer to a gas atmosphere including oxygen.
公开/授权文献
- US20130011942A1 Method for Manufacturing Light Emitting Device 公开/授权日：2013-01-10