发明授权
- 专利标题: Methods and patterning devices for measuring phase aberration
- 专利标题(中): 用于测量相位差的方法和图案形成装置
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申请号: US13533082申请日: 2012-06-26
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公开(公告)号: US09201311B2公开(公告)日: 2015-12-01
- 发明人: Willem Marie Julia Marcel Coene , Sven Van Haver
- 申请人: Willem Marie Julia Marcel Coene , Sven Van Haver
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; G01B15/04 ; G01B11/24 ; G03F1/26 ; G03F1/34
摘要:
A method of measuring a phase difference between two regions in an aberration function: Reference structures are produced on a substrate using illumination that minimizes effects of phase aberration. A grating is produced on the substrate using a phase-shift grating reticle to produce, in the exit pupil, a pair of diffracted non-zero orders, while forbidding other diffracted orders and produces interference fringes formed by interference between the pair. The interference contributes to a first grating on the substrate. Overlay error is measured between the grating and the reference structure using diffraction-based or image-based overlay measurements. A phase aberration function for the exit pupil of the lithographic apparatus can then be determined from the measured overlay errors.
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