Invention Grant
- Patent Title: Write word-line assist circuitry for a byte-writeable memory
- Patent Title (中): 为字节可写存储器写入字线辅助电路
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Application No.: US13656593Application Date: 2012-10-19
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Publication No.: US09202555B2Publication Date: 2015-12-01
- Inventor: Changho Jung , Nishith Desai , Sei Seung Yoon
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Chui-kiu Teresa Wong; Paul Holdaway
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/418 ; G11C8/08 ; G11C11/419
Abstract:
A write-assisted memory. The write-assisted memory includes a word-line decoder that is implemented within a low VDD power domain. The write-assisted memory also includes a write-segment controller that is partially implemented within the low VDD power domain and is partially implemented within a high VDD power domain. The write-assisted memory further includes a local write word-line decoder that is implemented within the high VDD power domain.
Public/Granted literature
- US20140112061A1 WRITE WORD-LINE ASSIST CIRCUITRY FOR A BYTE-WRITEABLE MEMORY Public/Granted day:2014-04-24
Information query
