发明授权
US09202662B2 Charged particle lithography system with a long shape illumination beam
有权
具有长形照明光束的带电粒子光刻系统
- 专利标题: Charged particle lithography system with a long shape illumination beam
- 专利标题(中): 具有长形照明光束的带电粒子光刻系统
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申请号: US13756178申请日: 2013-01-31
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公开(公告)号: US09202662B2公开(公告)日: 2015-12-01
- 发明人: Jimmy Hsiao , Ming-Zhang Kuo , Ping-Lin Yang , Cheng-Chung Lin , Osamu Takahashi , Sang Hoo Dhong
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: G21K5/04
- IPC分类号: G21K5/04 ; H01J29/62 ; H01J3/12 ; H01J3/16 ; H01J3/18 ; H01J37/30 ; H01J37/317
摘要:
A system includes an integrated circuit (IC) design data base having a feature, a source configured to generate a radiation beam, a pattern generator (PG) including a mirror array plate and an electrode plate disposed over the mirror array plate, wherein the electrode plate includes a lens let having a first dimension and a second dimension perpendicular to the first dimension with the first dimension larger than the second dimension so that the lens let modifies the radiation beam to form the long shaped radiation beam, and a stage configured secured the substrate. The system further includes an electric field generator connecting the mirror array plate. The mirror array plate includes a mirror. The mirror absorbs or reflects the radiation beam. The radiation beam includes electron beam or ion beam. The second dimension is equal to a minimum dimension of the feature.