发明授权
US09202745B2 Directional SiO2 etch using low-temperature etchant deposition and plasma post-treatment
有权
使用低温蚀刻剂沉积和等离子体后处理的方向SiO 2蚀刻
- 专利标题： Directional SiO2 etch using low-temperature etchant deposition and plasma post-treatment
- 专利标题（中）： 使用低温蚀刻剂沉积和等离子体后处理的方向SiO 2蚀刻
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申请号： US14466821申请日： 2014-08-22
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公开(公告)号： US09202745B2公开(公告)日： 2015-12-01
- 发明人: David T. Or , Joshua Collins , Mei Chang
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, LLP
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/02 ; H01L21/311 ; H01L21/3065
摘要：
Methods for processing a substrate are described herein. Methods can include positioning a substrate comprising silicon in a processing chamber, delivering a plasma to the surface of the substrate while biasing the substrate, exposing the surface of the substrate to ammonium fluoride (NH4F), and annealing the substrate to a first temperature to sublimate one or more volatile byproducts.
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