发明授权
- 专利标题: Structure of capacitor
- 专利标题(中): 电容器结构
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申请号: US14812275申请日: 2015-07-29
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公开(公告)号: US09202861B1公开(公告)日: 2015-12-01
- 发明人: Yong-Ji Mao
- 申请人: United Microelectronics Corp.
- 申请人地址: TW Hsinchu
- 专利权人: United Microelectronics Corp.
- 当前专利权人: United Microelectronics Corp.
- 当前专利权人地址: TW Hsinchu
- 代理机构: J.C. Patents
- 优先权: CN201410235895 20140529
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L49/02 ; H01L27/08 ; H01L23/522
摘要:
A capacitor including a substrate, a conductive layer, a middle dielectric material layer, a first dielectric material layer, and a second dielectric material layer is provided. The conductive layer includes a first electrode and a second electrode, and the conductive layer is located over the substrate. The middle dielectric material layer is located between the first electrode and the second electrode. The first dielectric material layer is located between the middle dielectric material layer and the first electrode. The second dielectric material layer is located between the middle dielectric material layer and the second electrode. The dielectric constant of the middle dielectric material layer is different from the dielectric constants of the first dielectric material layer and the second dielectric material layer.
公开/授权文献
- US20150349049A1 STRUCTURE OF CAPACITOR 公开/授权日:2015-12-03
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