发明授权
- 专利标题： U-shaped semiconductor structure
- 专利标题（中）： U形半导体结构
-
申请号： US13968169申请日： 2013-08-15
-
公开(公告)号： US09202893B2公开(公告)日： 2015-12-01
- 发明人: Kangguo Cheng , Bruce B. Doris , Pouya Hashemi , Ali Khakifirooz
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC
- 当前专利权人： GLOBALFOUNDRIES INC
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Tutunjian & Bitetto, P.C.
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L21/02
摘要：
A method for forming a U-shaped semiconductor device includes forming trenches in a crystalline layer and epitaxially growing a U-shaped semiconductor material along sidewalls and bottoms of the trenches. The U-shaped semiconductor material is anchored, and the crystalline layer is removed. The U-shaped semiconductor material is supported by backfilling underneath the U-shaped semiconductor material with a dielectric material. A semiconductor device is formed with the U-shaped semiconductor material.
公开/授权文献
- US20140239398A1 U-SHAPED SEMICONDUCTOR STRUCTURE 公开/授权日：2014-08-28
信息查询
IPC分类:
