Invention Grant
- Patent Title: Plasmon induced hot carrier device, method for using the same, and method for manufacturing the same
- Patent Title (中): 等离子体诱导热载体装置，其使用方法及其制造方法
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Application No.: US13884552Application Date: 2011-11-11
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Publication No.: US09202952B2Publication Date: 2015-12-01
- Inventor: Mark William Knight , Heidar Sobhani Khakestar , Peter Nordlander , Nancy J. Halas
- Applicant: Mark William Knight , Heidar Sobhani Khakestar , Peter Nordlander , Nancy J. Halas
- Applicant Address: US TX Houston
- Assignee: William Marsh Rice University
- Current Assignee: William Marsh Rice University
- Current Assignee Address: US TX Houston
- Agency: Osha Liang LLP
- International Application: PCT/US2011/060371 WO 20111111
- International Announcement: WO2012/065063 WO 20120518
- Main IPC: H01L31/0236
- IPC: H01L31/0236 ; H01L31/0384 ; H01L31/108
Abstract:
In general, the invention relates to a unit that includes a semiconductor and a plasmonic material disposed on the semiconductor, where a potential barrier is formed between the plasmonic material and the semiconductor. The unit further includes an insulator disposed on the semiconductor and adjacent to the plasmonic material and a transparent conductor disposed on the plasmonic material, where, upon illumination, the plasmonic material is excited resulting the excitation of an electron with sufficient energy to overcome the potential barrier.
Public/Granted literature
- US20130299933A1 PLASMON INDUCED HOT CARRIER DEVICE, METHOD FOR USING THE SAME, AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-11-14
Information query
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