发明授权
- 专利标题： Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing films depositions
- 专利标题（中）： 镍二氮杂二烯前体，它们的合成及其在含镍膜沉积中的用途
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申请号： US14347544申请日： 2012-09-27
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公开(公告)号： US09206507B2公开(公告)日： 2015-12-08
- 发明人: Clément Lansalot-Matras , Julien Gatineau , Benjamin J. Jurcik, Jr.
- 申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
- 申请人地址： FR Paris US CA Fremont
- 专利权人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude,American Air Liquide, Inc.
- 当前专利权人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude,American Air Liquide, Inc.
- 当前专利权人地址： FR Paris US CA Fremont
- 代理商 Patricia E. McQueeney
- 国际申请： PCT/IB2012/055171 WO 20120927
- 国际公布： WO2013/046157 WO 20130404
- 主分类号： C23C16/18
- IPC分类号： C23C16/18 ; C23C16/455 ; H01L21/285 ; C23C16/42
摘要：
Disclosed are homoleptic diazabutadiene nickel precursors used for the vapor deposition of nickel-containing films. The precursors have the general formula Ni(R-DAD)2, wherein R-DAD stands for substituted 1,4-diazabuta-1,3-diene ligands. The sole presence of the Ni—N bonds was also considered to avoid too high intrusion of other elements, such as carbon, into the nickel-containing films. The flexibility of the Ni—N bond in terms of film deposition also allows using the molecules for nickel, nickel-nitride, nickel-carbonitride, nickel oxide or any other type of nickel-containing films. The nickel-containing film depositions can be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD or any other type of depositions methods.
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