发明授权
- 专利标题： Method of operating film deposition apparatus and film deposition apparatus
- 专利标题（中）： 操作成膜装置和成膜装置的方法
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申请号： US13932154申请日： 2013-07-01
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公开(公告)号： US09209011B2公开(公告)日： 2015-12-08
- 发明人: Hitoshi Kato , Shigehiro Miura
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： IPUSA, PLLC
- 优先权： JP2012-152659 20120706
- 主分类号： B44C1/22
- IPC分类号： B44C1/22 ; H01L21/02 ; C23C16/02 ; C23C16/455 ; H01J37/32
摘要：
A method of operating a film deposition apparatus including a turntable provided in a vacuum chamber and configured to rotate a substrate mounted thereon, a first reaction gas supplying portion, a second reaction gas supplying portion, a separation area, a first vacuum evacuation port for mainly evacuating the first reaction gas, a second vacuum evacuation port for mainly evacuating the second reaction gas, and a cleaning gas supplying portion for supplying a cleaning gas to clean the turntable, the method includes a cleaning step of supplying the cleaning gas from the cleaning gas supplying portion into the vacuum chamber while terminating the evacuation from the first vacuum evacuation port and performing the evacuation from the second vacuum evacuation port.
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