Invention Grant
US09209202B2 Enabling bulk FINFET-based devices for FINFET technology with dielectric isolation
有权
使用具有绝缘隔离的FINFET技术的批量FINFET器件
- Patent Title: Enabling bulk FINFET-based devices for FINFET technology with dielectric isolation
- Patent Title (中): 使用具有绝缘隔离的FINFET技术的批量FINFET器件
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Application No.: US14192798Application Date: 2014-02-27
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Publication No.: US09209202B2Publication Date: 2015-12-08
- Inventor: Shom Surendran Ponoth , Changyok Park
- Applicant: BROADCOM CORPORATION
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L27/12 ; H01L21/762
Abstract:
A method for forming a dielectric-isolated bulk fin field-effect transistor (finFET) device includes forming a second isolation layer over a first structure including multiple partially exposed fins and horizontal areas including a first isolation layer. The second isolation layer is removed from horizontal areas of a first portion of the first structure. An oxide layer is formed under the fins of the first portion of the first structure. The second isolation layer is removed in order to expose the partially exposed fins and horizontal areas of the first structure to form a second structure, on which gate regions are formed.
Public/Granted literature
- US20150228668A1 ENABLING BULK FINFET-BASED DEVICES FOR FINFET TECHNOLOGY WITH DIELECTRIC ISOLATION Public/Granted day:2015-08-13
Information query
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