发明授权
- 专利标题： Fin field effect transistor
- 专利标题（中）： 鳍场效应晶体管
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申请号： US14337494申请日： 2014-07-22
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公开(公告)号： US09209300B2公开(公告)日： 2015-12-08
- 发明人: Hung-Ta Lin , Chu-Yun Fu , Shin-Yeh Huang , Shu-Tine Yang , Hung-Ming Chen
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/84
- IPC分类号： H01L29/84 ; H01L29/78 ; H01L29/66
摘要：
A fin field effect transistor including a first insulation region and a second insulation region over a top surface of a substrate. The first insulation region includes tapered top surfaces, and the second insulation region includes tapered top surfaces. The fin field effect transistor further includes a fin extending above the top surface between the first insulation region and the second insulation region. The fin includes a first portion having a top surface below the tapered top surfaces of the first insulation region. The fin includes a second portion having a top surface above the tapered top surfaces of the first insulation region.
公开/授权文献
- US20140327091A1 FIN FIELD EFFECT TRANSISTOR 公开/授权日：2014-11-06
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