发明授权
- 专利标题： Thin film transistor and method for manufacturing the same
- 专利标题（中）： 薄膜晶体管及其制造方法
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申请号： US13410892申请日： 2012-03-02
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公开(公告)号： US09209311B2公开(公告)日： 2015-12-08
- 发明人: Tomomasa Ueda , Shintaro Nakano , Nobuyoshi Saito , Yujiro Hara , Shuichi Uchikoga
- 申请人： Tomomasa Ueda , Shintaro Nakano , Nobuyoshi Saito , Yujiro Hara , Shuichi Uchikoga
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; B82Y10/00 ; H01L29/66
摘要：
According to one embodiment, a thin film transistor includes a gate electrode, a semiconductor layer, a gate insulating film, and a source electrode and a drain electrode. The semiconductor layer includes an oxide including at least one of gallium and zinc, and indium. The gate insulating film is provided between the gate electrode and the semiconductor layer. The source electrode and a drain electrode are electrically connected to the semiconductor layer and spaced from each other. The semiconductor layer includes a plurality of fine crystallites dispersed three-dimensionally in the semiconductor layer and has periodicity in arrangement of atoms.
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