Invention Grant
US09209336B2 Array of mutually isolated, geiger-mode, avalanche photodiodes and manufacturing method thereof
有权
相互隔离，盖格模式，雪崩光电二极管的阵列及其制造方法
- Patent Title: Array of mutually isolated, geiger-mode, avalanche photodiodes and manufacturing method thereof
- Patent Title (中): 相互隔离，盖格模式，雪崩光电二极管的阵列及其制造方法
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Application No.: US14281529Application Date: 2014-05-19
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Publication No.: US09209336B2Publication Date: 2015-12-08
- Inventor: Delfo Nunziato Sanfilippo , Piero Giorgio Fallica
- Applicant: STMICROELECTRONICS S.r.l.
- Applicant Address: IT Agrate Brianza (MB)
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza (MB)
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: ITTO2008A0046 20080118
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L31/107 ; H01L27/146 ; H01L25/16
Abstract:
An embodiment of array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type and housing an anode region, of a second conductivity type, facing a top surface of the body, a cathode-contact region, having the first conductivity type and a higher doping level than the body, facing a bottom surface of the body, an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the anode region and the cathode-contact region. The insulation region is formed by a first mirror region of polycrystalline silicon, a second mirror region of metal material, and a channel-stopper region of dielectric material, surrounding the first and second mirror regions.
Public/Granted literature
- US20140252524A1 ARRAY OF MUTUALLY ISOLATED, GEIGER-MODE, AVALANCHE PHOTODIODES AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-09-11
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