Invention Grant
- Patent Title: Photosensing transistors, methods of manufacturing the same, and display panels employing a photosensing transistor
- Patent Title (中): 感光晶体管,其制造方法以及采用光敏晶体管的显示面板
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Application No.: US13607019Application Date: 2012-09-07
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Publication No.: US09209337B2Publication Date: 2015-12-08
- Inventor: Sang-hun Jeon , I-hun Song , Seung-eon Ahn
- Applicant: Sang-hun Jeon , I-hun Song , Seung-eon Ahn
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0025666 20120313
- Main IPC: G06F3/042
- IPC: G06F3/042 ; H01L31/113 ; H01L31/032 ; G01J1/42 ; G01J1/44

Abstract:
Photosensing transistors, display panels employing a photosensing transistor, and methods of manufacturing the same, include a gate layer, a gate insulation layer on the gate layer, a channel layer on the gate insulation layer, an etch stop layer on a partial area of the channel layer, a source and a drain on the channel layer and separated from each other with the etch stop layer being interposed between the source and the drain, and a passivation layer covering the source, the drain, and the etch stop layer, wherein the source is separated from the etch stop layer.
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