Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US14365370Application Date: 2012-12-12
-
Publication No.: US09209358B2Publication Date: 2015-12-08
- Inventor: Won Cheol Seo , Dae Sung Cho , Chung Hoon Lee , Ki Bum Nam
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2011-0134129 20111214; KR10-2011-0135513 20111215; KR10-2011-0139378 20111221
- International Application: PCT/KR2012/010765 WO 20121212
- International Announcement: WO2013/089417 WO 20130620
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L21/02 ; H01L33/16 ; H01L33/32 ; H01L33/00 ; H01L33/38 ; H01L33/42 ; H01L33/46
Abstract:
Disclosed are a semiconductor device and a method of fabricating the same. A light emitting diode (LED) includes a conductive substrate, and a gallium nitride (GaN)-based semiconductor stack positioned on the conductive substrate. The semiconductor stack includes an active layer that is a semi-polar semiconductor layer. Accordingly, it is possible to provide an LED having improved light emitting efficiency.
Public/Granted literature
- US20140353679A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-12-04
Information query
IPC分类:
